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SI2319DS-T1-E3

Vishay Siliconix
SI2319DS-T1-E3 HongDa Electronics SI2319DS-T1-E3
  • Manufacturer Part# SI2319DS-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 40V 2.3A SOT23-3P-Channel 40V 2.3A (Ta...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
SI2319DS-T1-E3 Datasheet

Technical Details

  • Series:TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:82 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:470pF @ 20V
  • FET Feature:--
  • Power Dissipation (Max):750mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Feature

    1. Halogen free in accordance with IEC 61249-2-21 available

    2. TrenchFET® Power MOSFET

2. Application

    1. Load switch

3. Pin configuration

image.png

4. Package overview

image.png

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