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SI2365EDS-T1-GE3

Vishay Siliconix
SI2365EDS-T1-GE3 HongDa Electronics SI2365EDS-T1-GE3
  • Manufacturer Part# SI2365EDS-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 5.9A TO-236
  • More DetailP-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface...
In Stock: 15000

Can ship immediately

Datasheet:
SI2365EDS-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1W (Ta), 1.7W (Tc)
  • FET Feature:--
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 8V
  • Series:TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:32 mOhm @ 4A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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