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SI3475DV-T1-E3

Vishay Siliconix
SI3475DV-T1-E3 HongDa Electronics SI3475DV-T1-E3
  • Manufacturer Part# SI3475DV-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 200V 0.95A 6-TSOP
  • More DetailP-Channel 200V 950mA (Tc) 2W (Ta), 3.2W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
SI3475DV-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2W (Ta), 3.2W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:500pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:1.61 Ohm @ 900mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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