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SI3493BDV-T1-GE3

Vishay Siliconix
SI3493BDV-T1-GE3 HongDa Electronics SI3493BDV-T1-GE3
  • Manufacturer Part# SI3493BDV-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 8A 6-TSOP
  • More DetailP-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
SI3493BDV-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.08W (Ta), 2.97W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1805pF @ 10V
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:43.5nC @ 5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:27.5 mOhm @ 7A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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