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SI3459BDV-T1-GE3 Discrete Semiconductor Products

Vishay Siliconix
SI3459BDV-T1-GE3 HongDa Electronics SI3459BDV-T1-GE3
  • Manufacturer Part# SI3459BDV-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 2.9A 6-TSOP
  • More DetailP-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface...
In Stock: 12000

Can ship immediately

Datasheet:
SI3459BDV-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2W (Ta), 3.3W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:350pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:216 mOhm @ 2.2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:2.9A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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