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SI3442BDV-T1-E3

Vishay Siliconix
SI3442BDV-T1-E3 HongDa Electronics SI3442BDV-T1-E3
  • Manufacturer Part# SI3442BDV-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 20V 3A 6-TSOP
  • More DetailN-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-T...
In Stock: 12000

Can ship immediately

Datasheet:
SI3442BDV-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.8V @ 250µA
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):860mW (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:295pF @ 10V
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:5nC @ 4.5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:57 mOhm @ 4A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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