SI5855CDC-T1-E3

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:1206-8 ChipFET™
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.3W (Ta), 2.8W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:276pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 5V

• Series:LITTLE FOOT®
• Rds On (Max) @ Id, Vgs:144 mOhm @ 2.5A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Last Time Buy
• Packaging:Tape & Reel (TR)