SI5857DU-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Package / Case:PowerPAK® ChipFET™ Dual
• Supplier Device Package:PowerPAK® ChipFet Dual
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2.3W (Ta), 10.4W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:480pF @ 10V
• Vgs (Max):±12V
• Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V

• Series:LITTLE FOOT®
• Rds On (Max) @ Id, Vgs:58 mOhm @ 3.6A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)