SI5855DC-T1-E3

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:1206-8 ChipFET™
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.1W (Ta)
• FET Feature:Schottky Diode (Isolated)
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V
• Series:TrenchFET®

• Rds On (Max) @ Id, Vgs:110 mOhm @ 2.7A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)