SIA810DJ-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:PowerPAK® SC-70-6 Dual
• Supplier Device Package:PowerPAK® SC-70-6 Dual
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.9W (Ta), 6.5W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:400pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 8V

• Series:LITTLE FOOT®
• Rds On (Max) @ Id, Vgs:53 mOhm @ 3.7A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)