SIA850DJ-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:1.4V @ 250µA
• Package / Case:PowerPAK® SC-70-6 Dual
• Supplier Device Package:PowerPAK® SC-70-6 Dual
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.9W (Ta), 7W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:90pF @ 100V
• Vgs (Max):±16V
• Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V

• Series:LITTLE FOOT®
• Rds On (Max) @ Id, Vgs:3.8 Ohm @ 360mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
• Drain to Source Voltage (Vdss):190V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)