SIA817EDJ-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:1.3V @ 250µA
• Package / Case:PowerPAK® SC-70-6 Dual
• Supplier Device Package:PowerPAK® SC-70-6 Dual
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.9W (Ta), 6.5W (Tc)
• FET Feature:Schottky Diode (Body)
• Input Capacitance (Ciss) (Max) @ Vds:600pF @ 15V
• Vgs (Max):±12V
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

• Series:LITTLE FOOT®
• Rds On (Max) @ Id, Vgs:65 mOhm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)