TPCF8102(TE85L,F,M

Technical Details

• Vgs(th) (Max) @ Id:1.2V @ 200µA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:VS-8 (2.9x1.5)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1550pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:19nC @ 5V

• Series:U-MOSIII
• Rds On (Max) @ Id, Vgs:30 mOhm @ 3A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)