TPCF8107,LF Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 100µA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:VS-8 (2.9x1.5)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:970pF @ 10V
• Vgs (Max):+20V, -25V
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V

• Series:U-MOSVI
• Rds On (Max) @ Id, Vgs:28 mOhm @ 3A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:6A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Discontinued at Digi-Key
• Packaging:Cut Tape (CT)