TPCF8B01(TE85L,F,M Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.2V @ 200µA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:VS-8 (2.9x1.5)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):330mW (Ta)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:470pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:6nC @ 5V

• Series:U-MOSIII
• Rds On (Max) @ Id, Vgs:110 mOhm @ 1.4A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)