TPN2010FNH,L1Q Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 200µA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta), 39W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:600pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V

• Series:U-MOSVIII-H
• Rds On (Max) @ Id, Vgs:198 mOhm @ 2.8A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
• Drain to Source Voltage (Vdss):250V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)