TPN2R805PL,L1Q

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Mounting Type:Surface Mount
• Operating Temperature:175°C
• Power Dissipation (Max):2.67W (Ta), 104W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3.2nF @ 22.5V
• Vgs (Max):±20V
• Series:U-MOSIX-H

• Vgs(th) (Max) @ Id:2.4V @ 300µA
• Rds On (Max) @ Id, Vgs:2.8 mOhm @ 40A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:139A (Ta), 80A (Tc)
• Drain to Source Voltage (Vdss):45V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active