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TPN2R304PL,L1Q Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
TPN2R304PL,L1Q HongDa Electronics TPN2R304PL,L1Q
  • Manufacturer Part# TPN2R304PL,L1Q
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 40V 80A TSONN-Channel 40V 80A (Tc) 630...
  • More DetailN/A
In Stock: 15035

Can ship immediately

Datasheet:
TPN2R304PL,L1Q Datasheet

Technical Details

  • Series:U-MOSIX-H
  • Packaging:Digi-Reel® 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.3 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 0.3mA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3600pF @ 20V
  • FET Feature:--
  • Power Dissipation (Max):630mW (Ta), 104W (Tc)
  • Operating Temperature:175°C
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-TSON Advance (3.3x3.3)
  • Package / Case:8-PowerVDFN
  • Base Part Number:TPN2R304

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Feature

    1. High-speed switch

    2. Small gate charge: QSW = 10.8 nC (typ)

    3. Small output charge: Qoss = 27 nC (typ)

    4. Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ) (VGS = 10 V)

    5. Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

    6. Enhanced Mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.3 mA)

2. Application

    1. High Efficiency DC-DC Converter

    2. Switching Regulators

    3. motor driver

3. Pin configuration

image.png

4. Dynamic Characteristics

image.png

5. Packaging overview

image.png




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