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FCP125N65S3R0

ON Semiconductor
FCP125N65S3R0 HongDa Electronics FCP125N65S3R0
  • Manufacturer Part# FCP125N65S3R0
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionSUPERFET3 650V TO220 PKG
  • More DetailN-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-...
In Stock: 800

Can ship immediately

Datasheet:
FCP125N65S3R0 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 2.4mA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):181W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1940pF @ 400V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V

 

  • Series:SuperFET® III
  • Rds On (Max) @ Id, Vgs:125 mOhm @ 12A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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