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FCP13N60N

ON Semiconductor
FCP13N60N HongDa Electronics FCP13N60N
  • Manufacturer Part# FCP13N60N
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 13A TO220
  • More DetailN-Channel 600V 13A (Tc) 116W (Tc) Through Hole TO-...
In Stock: 794

Can ship immediately

Datasheet:
FCP13N60N Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):116W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1765pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:39.5nC @ 10V

 

  • Series:SupreMOS™
  • Rds On (Max) @ Id, Vgs:258 mOhm @ 6.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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