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FCP190N65F

ON Semiconductor
FCP190N65F HongDa Electronics FCP190N65F
  • Manufacturer Part# FCP190N65F
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 20.6A TO220-3
  • More DetailN-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole T...
In Stock: 392

Can ship immediately

Datasheet:
FCP190N65F Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 2mA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):208W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3225pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V

 

  • Series:FRFET®, SuperFET® II
  • Rds On (Max) @ Id, Vgs:190 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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