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FCP165N65S3R0

ON Semiconductor
FCP165N65S3R0 HongDa Electronics FCP165N65S3R0
  • Manufacturer Part# FCP165N65S3R0
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionSUPERFET3 650V TO220 PKG
  • More DetailN-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
FCP165N65S3R0 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 1.9mA
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):154W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 400V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V

 

  • Series:SuperFET® III
  • Rds On (Max) @ Id, Vgs:165 mOhm @ 9.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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