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IPW60R125P6XKSA1

Infineon Technologies
IPW60R125P6XKSA1 HongDa Electronics IPW60R125P6XKSA1
  • Manufacturer Part# IPW60R125P6XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V TO247-3
  • More DetailN-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-...
In Stock: 130

Can ship immediately

Datasheet:
IPW60R125P6XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 960µA
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):219W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2660pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V

 

  • Series:CoolMOS™ P6
  • Rds On (Max) @ Id, Vgs:125 mOhm @ 11.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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