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IPW65R190C7XKSA1

Infineon Technologies
IPW65R190C7XKSA1 HongDa Electronics IPW65R190C7XKSA1
  • Manufacturer Part# IPW65R190C7XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 20.2A TO247
  • More DetailN-Channel 650V 13A (Tc) 72W (Tc) Through Hole PG-T...
In Stock: 1000

Can ship immediately

Datasheet:
IPW65R190C7XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 290µA
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):72W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1150pF @ 400V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

 

  • Series:CoolMOS™ C7
  • Rds On (Max) @ Id, Vgs:190 mOhm @ 5.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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