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IPW65R080CFDAFKSA1

Infineon Technologies
IPW65R080CFDAFKSA1 HongDa Electronics IPW65R080CFDAFKSA1
  • Manufacturer Part# IPW65R080CFDAFKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 700V 43.3A TO247
  • More DetailN-Channel 650V 43.3A (Tc) 391W (Tc) Through Hole P...
In Stock: 960

Can ship immediately

Datasheet:
IPW65R080CFDAFKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 1.76mA
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):391W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4440pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:161nC @ 10V

 

  • Series:Automotive, AEC-Q101, CoolMOS™
  • Rds On (Max) @ Id, Vgs:80 mOhm @ 17.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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