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IPW65R110CFDAFKSA1

Infineon Technologies
IPW65R110CFDAFKSA1 HongDa Electronics IPW65R110CFDAFKSA1
  • Manufacturer Part# IPW65R110CFDAFKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 31.2A TO247
  • More DetailN-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole...
In Stock: 238

Can ship immediately

Datasheet:
IPW65R110CFDAFKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 1.3mA
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):277.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3240pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:118nC @ 10V

 

  • Series:Automotive, AEC-Q101, CoolMOS™
  • Rds On (Max) @ Id, Vgs:110 mOhm @ 12.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:31.2A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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