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IRFHM8363TRPBF

Infineon Technologies
IRFHM8363TRPBF HongDa Electronics IRFHM8363TRPBF
  • Manufacturer Part# IRFHM8363TRPBF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 30V 11A 8PQFN
  • More DetailMosfet Array 2 N-Channel (Dual) 30V 11A 2.7W Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
IRFHM8363TRPBF Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.35V @ 25µA
  • Base Part Number:IRFHM8363PBF
  • Supplier Device Package:8-PQFN (3.3x3.3), Power33
  • Package / Case:8-PowerVDFN
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power - Max:2.7W
  • Input Capacitance (Ciss) (Max) @ Vds:1165pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V

 

  • Series:HEXFET®
  • Rds On (Max) @ Id, Vgs:14.9 mOhm @ 10A, 10V
  • Current - Continuous Drain (Id) @ 25°C:11A
  • Drain to Source Voltage (Vdss):30V
  • FET Feature:Logic Level Gate
  • FET Type:2 N-Channel (Dual)
  • Part Status:Not For New Designs
  • Packaging:Tape & Reel (TR) 

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