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SI3430DV-T1-GE3

Vishay Siliconix
SI3430DV-T1-GE3 HongDa Electronics SI3430DV-T1-GE3
  • Manufacturer Part# SI3430DV-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 1.8A 6-TSOP
  • More DetailN-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount ...
In Stock: 1000

Can ship immediately

Datasheet:
SI3430DV-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 250µA (Min)
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.14W (Ta)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:6.6nC @ 10V
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:170 mOhm @ 2.4A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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