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SQ2308CES-T1_GE3

Vishay Siliconix
SQ2308CES-T1_GE3 HongDa Electronics SQ2308CES-T1_GE3
  • Manufacturer Part# SQ2308CES-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 2.3A
  • More DetailN-Channel 60V 2.3A (Tc) 2W (Tc) Surface Mount SOT-...
In Stock: 12000

Can ship immediately

Datasheet:
SQ2308CES-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):2W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:205pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:5.3nC @ 10V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:150 mOhm @ 2.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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