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SQ2389ES-T1_GE3

Vishay Siliconix
SQ2389ES-T1_GE3 HongDa Electronics SQ2389ES-T1_GE3
  • Manufacturer Part# SQ2389ES-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CHAN 40V SO23
  • More DetailP-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-...
In Stock: 12000

Can ship immediately

Datasheet:
SQ2389ES-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:420pF @ 20V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:94 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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