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SQ2361AEES-T1_GE3

Vishay Siliconix
SQ2361AEES-T1_GE3 HongDa Electronics SQ2361AEES-T1_GE3
  • Manufacturer Part# SQ2361AEES-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 2.5A SSOT23
  • More DetailP-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
In Stock: 1000

Can ship immediately

Datasheet:
SQ2361AEES-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TA)
  • Power Dissipation (Max):2W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:620pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
  • Series:Automotive, AEC-Q101, TrenchFET®

 

  • Rds On (Max) @ Id, Vgs:170 mOhm @ 2.4A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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