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SQ2319ES-T1-GE3

Vishay Siliconix
SQ2319ES-T1-GE3 HongDa Electronics SQ2319ES-T1-GE3
  • Manufacturer Part# SQ2319ES-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 40V 4.6A TO-236
  • More DetailP-Channel 40V 4.6A (Tc) 3W (Tc) Surface Mount SOT-...
In Stock: 1000

Can ship immediately

Datasheet:
SQ2319ES-T1-GE3 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
  • Base Part Number:SQ2319
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):3W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:620pF @ 25V
  • Vgs (Max):±20V
  • Series:TrenchFET®

 

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Rds On (Max) @ Id, Vgs:75 mOhm @ 3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Cut Tape (CT) 

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