TRANSISTORS

Results: 63

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Mft.Part#
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Price(USD)
 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 7A (Tc) (165C)

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2N7637-GA Datasheet

In Stock: 1000

RFQ

 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 45A (Tc)

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 Packaging: Bulk
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C)

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2N7635-GA Datasheet

In Stock: 1000

RFQ

 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1700V
 Current - Continuous Drain (Id) @ 25C: 4A (Tc) (95C)

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 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1700V
 Current - Continuous Drain (Id) @ 25C: 16A (Tc) (90C)

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 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1700V
 Current - Continuous Drain (Id) @ 25C: 160A (Tc)

--


 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 45A (Tc)

--


 Packaging: Bulk
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 600V
 Current - Continuous Drain (Id) @ 25C: 100A (Tc)

--


 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 10A (Tc)

--


 Packaging: Bulk
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 100V
 Current - Continuous Drain (Id) @ 25C: 9A (Tc)

--


 Packaging: Bulk
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 300V
 Current - Continuous Drain (Id) @ 25C: 9A (Tc)

--


 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 5A (Tc)

--


 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 3A (Tc) (95C)

--


 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 6A (Tc) (90C)

--


 Packaging: Bulk
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 15A (Tc) (155C)

--

2N7639-GA Datasheet

In Stock: 1000

RFQ

 Packaging: Tube
 Part Status: Obsolete
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 650V
 Current - Continuous Drain (Id) @ 25C: 4A (Tc) (165C)

--

2N7636-GA Datasheet

In Stock: 1000

RFQ

 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 25A (Tc)

--


 Packaging: Tube
 Part Status: Active
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 100A (Tc)

--


 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 48A (Tc)

--


 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 68A (Tc)

--


 Series: C3M
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)

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 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)
 Drain to Source Voltage (Vdss): 1200V
 Current - Continuous Drain (Id) @ 25C: 47A (Tc)

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 Series: C3M
 Packaging: Tape & Reel (TR)
 Part Status: Active
 FET Type: N-Channel
 Technology: SiC (Silicon Carbide Junction Transistor)

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