Packaging: Tube
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 45A (Tc)
Packaging: Tube
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25C: 4A (Tc) (95C)
Packaging: Tube
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 45A (Tc)
Packaging: Bulk
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25C: 100A (Tc)
Packaging: Bulk
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25C: 9A (Tc)
Packaging: Bulk
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25C: 9A (Tc)
Packaging: Tube
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 25A (Tc)
Packaging: Tube
Part Status: Active
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 100A (Tc)
Part Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 48A (Tc)
Part Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 68A (Tc)
Part Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25C: 47A (Tc)